Switching kinetics in epitaxial BiFeO3 thin films

Daniel Pantel, Ying-Hao Chu, Lane W. Martin, Ramamoorthy Ramesh, Dietrich Hesse, Marin Alexe
2010 Journal of Applied Physics  
The switching kinetics in epitaxial ͑001͒-, ͑110͒-, and ͑111͒-oriented BiFeO 3 thin films were investigated as a function of applied field and time. It was found that the ferroelectric switching behavior obeys the Kolmogorov-Avrami-Ishibashi theory only in the high field range. The detailed behavior depends on the film orientation. A comparison with standard systems, such as epitaxial Pb͑Zr 0.2 Ti 0.8 ͒O 3 films, reveals some similarities as well as some differences. For instance, the presence
more » ... f 109°and 71°ferroelastic domain walls might be ruled out as the source of the decrease in switched polarization at low applied fields, in contrast to what is the case for a/c domain walls in tetragonal Pb͑Zr 0.2 Ti 0.8 ͒O 3 .
doi:10.1063/1.3392884 fatcat:flbxrraj6rfipgnhiwjeyill2i