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Conduction power loss in MOSFET synchronous rectifier with parallel-connected Schottky barrier diode
1998
IEEE transactions on power electronics
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The conduction power loss in an MOSFET synchronous rectifier with a parallel-connected Schottky barrier diode (SBD) was investigated. It was found that the parasitic inductance between the MOSFET and SBD has a large effect on the conduction power loss. This parasitic inductance creates a current that is shared by the two devices for a certain period and increases the conduction power loss. If conventional devices are used for under 1-MHz switching, the advantage of the low onresistance MOSFET
doi:10.1109/63.704135
fatcat:7dywvpvikrh7hm5yf3tepgg2ky