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A Static Model for Electrolyte-Gated Organic Field-Effect Transistors
2011
IEEE Transactions on Electron Devices
Abstract-We present a DC model to simulate the static performance of electrolyte-gated organic field effect transistors. The channel current is expressed as charge drift transport under electric field. The charges accumulated in the channel are considered being contributed from voltage-dependent electric double layer capacitance. The voltage dependent contact effect and short channel effect are also taken into account in this model. A straightforward and efficient methodology is presented to
doi:10.1109/ted.2011.2162648
fatcat:wxrnu3vaxjbijonf2pzywixjuu