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Si/GaAs heterostructures were obtained by a low temperature direct wafer bonding (DWB) method which uses spin-on glass (SOG) intermediate layers. The use of intermediate SOG layers allows the fabrication of Si/GaAs heterostructures at processing temperatures lower than 200°C. The achieved bonding energy permits thinning down to a few microns of Si and GaAs wafers, respectively, using grinding procedures followed by chemical mechanical polishing (CMP). After thinning, the heterostructuresdoi:10.1557/proc-681-i5.3 fatcat:hnhqs6oiwrf43mna2wndhnwfjm