Investigation on Metal-Oxide Graphene Field-Effect Transistors with clamped geometries

Marco A. Giambra, Christian Benz, Fan Wu, Maximillian Thurmer, Geethu Balachandran, Antonio Benfante, Riccardo Pernice, Himadri Pandey, Muraleetharan Boopathi, Min-Ho Jang, Jong-Hyun Ahn, Salvatore Stivala (+6 others)
2019 IEEE Journal of the Electron Devices Society  
In this work, we report on the design, fabrication and characterization of Metal-Oxide Graphene Field-effect Transistors (MOGFETs) exploiting novel clamped gate geometries aimed at enhancing the device transconductance. The fabricated devices employ clamped metal contacts also for source and drain, as well as an optimized graphene meandered pattern for source contacting, in order to reduce parasitic resistance. Our experimental results demonstrate that MOGFETs with the proposed structure show
more » ... proved high frequency performance, in terms of maximum available gain and transition frequency values, as a consequence of the higher equivalent transconductance obtained.
doi:10.1109/jeds.2019.2939574 fatcat:mz4fyy5yufhnhg3fb7c7qevr7y