Inhibited Al Diffusion and Growth Roughening of Ga-Coated Al(100)

Vincenzo Fiorentini, Donatella Fois, Sabrina Oppo
1996 Physical Review Letters  
Ab initio calculations indicate that the ground state for Ga adsorption on Al (100) is on-surface with local unit coverage. On Ga-coated Al (100), the bridge diffusion barrier for Al is large, but the Al→Ga exchange barrier is zero: the ensuing incorporation of randomly deposited Al's into the Ga overlayer realizes a percolation network, efficiently recoated by Ga atoms. Based on calculated energetics, we predict rough surface growth at all temperatures; modeling the growth by a random
more » ... n model with partial relaxation, we find a power-law divergent roughness w∼ t^ 0.07±0.02.
doi:10.1103/physrevlett.77.695 pmid:10062879 fatcat:26r2oywlb5b7njrnhguyatfo4u