Gallium arsenide and silicon FET-type switches for repetitive pulsed power applications

Xianyue Gu, C.W. Myles, A. Kuthi, Q. Shui, M.A. Gundersen
Conference Record of the Twenty-Fifth International Power Modulator Symposium, 2002 and 2002 High-Voltage Workshop.  
Repetitive pulsed-power generators with nanosecond rise times and multi-kilovolt outputs commonly employ silicon MOSFET switches. Gallium arsenide FET switches hold the promise of faster operation, higher voltage hold-off, and greater current densities. The realization of this promise requires an understanding of the physical and practical limits of Si-and GaAs-based devices. In this paper, the results of ATLAS simulations on a Si MOSFET and on a GaAs SIT are presented. The results show that
more » ... esults show that GaAs-based devices are superior to those based on Si in terms of switching speeds and power dissipation, but that they have a relatively higher leakage current.
doi:10.1109/modsym.2002.1189508 fatcat:l3nrv5v2a5ayvbpgvz37wyzkv4