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2006 Sixth IEEE Conference on Nanotechnology
Silicon technology with gate dimensions of a few tens of nanometers is already in mass production. With continued innovation and advancements in materials, lithography tools, and device structures, further scaling down to sub-ten nanometer gate length is planned over the next 10 years. Continued silicon technology scaling faces many challenges, two of the most important being growing standby power dissipation and increasing variability in device characteristics. These effects are frequentlydoi:10.1109/nano.2006.247552 fatcat:753oxiwaxfhubbb3pfgy6sfo4i