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In this study, the carrier blocking effect on 850 nm InAlGaAs/AlGaAs vertical-cavity surface-emitting layers (VCSELs) was theoretically and experimentally investigated. By means of inserting a high-bandgap electron blocking layer, which was either 10 nm thick Al 0.75 Ga 0.25 As or 13 nm thick Al 0.9 Ga 0.1 As, on the p-side of a quantum-well active region, the laser output performance was theoretically found to be improved. VCSELs with and without an electron blocking layer were alsodoi:10.1088/0268-1242/21/10/023 fatcat:iqb64km5nndxpbzizafhwepk4i