A copy of this work was available on the public web and has been preserved in the Wayback Machine. The capture dates from 2017; you can also visit the original URL.
The file type is application/pdf
.
Recent enhancements in BSIM6 bulk MOSFET model
2013
2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
In this paper, we discuss the recent enhancements made in the BSIM6 bulk MOSFET model. BSIM6 is the latest compact model of bulk MOSFET from BSIM group which have body referenced charge based core. Junction capacitance model is improved over BSIM4 and is infinitely continuous around V bs =V bd =0V. Symmetry of the model is successfully validated by performing Gummel Symmetry Test (GST) in DC and symmetry test for capacitances in AC. Self heating model is also included in BSIM6 and test results
doi:10.1109/sispad.2013.6650572
fatcat:s6mcqalbvvbargpbfhs4dwpy7e