Recent enhancements in BSIM6 bulk MOSFET model

H. Agarwal, S. Venugopalan, M.-A. Chalkiadaki, N. Paydavosi, J. P. Duarte, S. Agnihotri, C. Yadav, P. Kushwaha, Y. S. Chauhan, C. C. Enz, A. Niknejad, C. Hu
2013 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)  
In this paper, we discuss the recent enhancements made in the BSIM6 bulk MOSFET model. BSIM6 is the latest compact model of bulk MOSFET from BSIM group which have body referenced charge based core. Junction capacitance model is improved over BSIM4 and is infinitely continuous around V bs =V bd =0V. Symmetry of the model is successfully validated by performing Gummel Symmetry Test (GST) in DC and symmetry test for capacitances in AC. Self heating model is also included in BSIM6 and test results
more » ... re reported. Model capabilities are compared against an advanced 40nm CMOS technology and it is observed that simulated results are in excellent agreement with the measured data.
doi:10.1109/sispad.2013.6650572 fatcat:s6mcqalbvvbargpbfhs4dwpy7e