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Electronics Below 10 nm
[chapter]
2003
Nano and Giga Challenges in Microelectronics
This chapter reviews prospects for the development and practical introduction of ultrasmall electron devices, including nanoscale field-effect transistors (FETs) and single-electron transistors (SETs), as well as new concepts for nanometer-scalable memory cells. Physics allows silicon FETs to be scaled down to ~3 nm gate length, but below ~10 nm the devices are extremely sensitive to minute (sub-nanometer) fabrication spreads. This sensitivity may send the fabrication facilities costs (high
doi:10.1016/b978-044451494-3/50002-0
fatcat:mnnrwqks5bekpb2kcqo3tcbxzu