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In order to obtain some of the parameters required to simulate the electric characteristics of silicon carbide (SiC) power electronic devices in a wide temperature range from startup temperatures ͑ഛ30°C͒ to steady-operation temperatures ͑ജ200°C͒, we discuss the dependence of the two donor levels on the total donor density ͑N D ͒ as well as the dependence of the electron mobility on the total impurity density ͑N imp ͒ and operating temperature ͑T͒ in the n-type 4H-SiC. The temperature-dependentdoi:10.1063/1.1798399 fatcat:wrsw5jvrybfwtenbdfymop6hne