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Taking into account oxidation temperature, N 2 carrier gas flow, and the geometry of the mesa structures this paper investigates the characteristics of selective oxidation during the fabrication of the vertical cavity surface emitting laser (VCSEL) in detail. Results show that the selective oxidation follows a law which differs from any reported in the literature. Below 435 • C selective oxidation of Al 0.98 Ga 0.02 As follows a linear growth law for the two mesa structures employed in VCSEL.doi:10.1088/1009-1963/15/8/029 fatcat:t7hb6kfyzvbl7pumbpmc7ajxli