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Heterostructures of transition metal dichalcogenides
Physical Review B
The structural, electronic, optical, and photocatalytic properties of out-of-plane and in-plane heterostructures of transition metal dichalcogenides are investigated by (hybrid) first principles calculations. The out-of-plane heterostructures are found to be indirect band gap semiconductors with type-II band alignment. Direct band gaps can be achieved by moderate tensile strain in specific cases. The excitonic peaks show blueshifts as compared to the parent monolayer systems, whereas redshiftsdoi:10.1103/physrevb.92.075439 fatcat:5gfhdet3vrfkvawppgb7orc534