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A Compact Model of Quantum Electron Density at the Subthreshold Region for Double-Gate Junctionless Transistors
2012
IEEE Transactions on Electron Devices
A compact model of quantum electron density at the subthreshold region is derived for junctionless (JL) double-gate (DG) FETs. The proposed quantum model is obtained under two different quantum confinement conditions. One is for a case of a thick channel and a heavily doped channel, where quantum confinement effects (QCEs) are modeled by a 1-D quantum harmonic oscillator. The other is for a case of a thin channel, where QCEs are modeled by the use of a 1-D quantum well surrounded by high
doi:10.1109/ted.2012.2185827
fatcat:frpz3ydh65glhopjspnfqrewxy