A proposal for a new type of thin-film field-emission display by edge breakdown of MIS structure

V N Konopsky
1998 Journal of Physics D: Applied Physics  
A new type of field emission display(FED) based on an edge-enhance electron emission from metal-insulator-semiconductor (MIS) thin film structure is proposed. The electrons produced by an avalanche breakdown in the semiconductor near the edge of a top metal electrode are initially injected to the thin film of an insulator with a negative electron affinity (NEA), and then are injected into vacuum in proximity to the top electrode edge. The condition for the deep-depletition breakdown near the
more » ... eakdown near the edge of the top metal electrode is analytically found in terms of ratio of the insulator thickness to the maximum (breakdown) width of the semiconductor depletition region: this ratio should be less than 2/(3 \pi - 2) = 0.27. The influence of a neighboring metal electrode and an electrode thickness on this condition are analyzed. Different practical schemes of the proposed display with a special reference to M/CaF_2/Si structure are considered.
doi:10.1088/0022-3727/31/6/007 fatcat:3prxiqdfqjeengat2wrenhou7u