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Recent Progress in Transition-Metal-Doped II–VI Mid-IR Lasers
IEEE Journal of Selected Topics in Quantum Electronics
Recent progress in transition metal doped II-VI semiconductor materials (mainly Cr 2+ :ZnSe) makes them the laser sources of choice when one needs a compact system with continuous tunability over 2-3.1 μm, output powers up to 2.7 W, and high (up to 70%) conversion efficiency. The unique combination of technological (low-cost ceramic material) and spectroscopic characteristics make these materials ideal candidates for "non-traditional" regimes of operation such as microchip and multi-linedoi:10.1109/jstqe.2007.896634 fatcat:g52sicavuvbmlokvqnjfsrokwq