Recent progress in transition metal doped II-VI semiconductor materials (mainly Cr 2+ :ZnSe) makes them the laser sources of choice when one needs a compact system with continuous tunability over 2-3.1 μm, output powers up to 2.7 W, and high (up to 70%) conversion efficiency. The unique combination of technological (low-cost ceramic material) and spectroscopic characteristics make these materials ideal candidates for "non-traditional" regimes of operation such as microchip and multi-line

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... This article reviews these nontraditional Cr-doped mid-IR lasers as well as describes emerging Fe 2+ :ZnSe lasers having potential to operate at room temperature over the spectral range extended to 3.7-5.1 μm. In addition to effective RT mid-IR lasing transition metal doped II-VI media, being wide band semiconductors, hold potential for direct electrical excitation. This work shows the initial steps towards achieving this goal by studying Cr 2+ , Co 2+ , and Fe 2+ doped quantum dots. We have demonstrated a novel method of TM doped II-VI quantum dots fabrication based on laser ablation in liquid environment. TM doped II-VI quantum dots demonstrated strong mid-IR luminescence. It opens a new pathway for future optically and electrically pumped mid-IR lasers based on TM doped quantum confined structures. Index Terms-Laser, mid-infrared, tunable, doped quantum dots.