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Scanning Electron Microscopy Cathodoluminescence Studies of Piezoelectric Fields in an InGaN Multiple Quantum Well Light-Emitting Diode

K L Bunker, R Garcia, P E Russell
2005 Microscopy and Microanalysis  

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This work involves the development and application of a Scanning Electron Microscopy (SEM)based Cathodoluminescence (CL) system for the investigation of piezoelectric fields in an indium gallium nitride (InGaN)-based optoelectronic device. SEM-based CL experiments in a Hitachi S-3200N were used to study the influence of piezoelectric fields on the luminescence properties of a commercial Cree, Inc. InGaN-based MQW X-Bright  green Light Emitting Diode [1]. The existence and direction of the
more » ... electric field in the InGaN-based device were investigated using SEM-CL peak voltage dependence and carrier generation density (i.e. beam current) dependence studies. Supporting evidence for the existence of a piezoelectric field in the device was determined from forward bias electroluminescence experiments.
doi:10.1017/s1431927605507815 fatcat:w2s4jyfs6rcablcbkhqhgbgqke
Citation

K L Bunker, R Garcia, P E Russell. "Scanning Electron Microscopy Cathodoluminescence Studies of Piezoelectric Fields in an InGaN Multiple Quantum Well Light-Emitting Diode." Microscopy and Microanalysis 11.S02 (2005)