Analysis of an anomalous hump in gate current after dynamic negative bias stress in HfxZr1-xO2/metal gate p-channel metal-oxide-semiconductor field-effect transistors
Applied Physics Letters
Articles you may be interested in Investigation of extra traps measured by charge pumping technique in high voltage zone in p-channel metaloxide-semiconductor field-effect transistors with HfO2/metal gate stacks Appl. Phys. Lett. 102, 012106 (2013); 10.1063/1.4773914 Investigation of an anomalous hump in gate current after negative-bias temperature-instability in HfO2/metal gate p-channel metal-oxide-semiconductor field-effect transistors Appl. Phys. Lett. 102, 012103 (2013); 10.1063/1.4773479
... nalysis of anomalous traps measured by charge pumping technique in HfO2/metal gate n-channel metal-oxidesemiconductor field-effect transistors Characterization of fast charge trapping in bias temperature instability in metal-oxide-semiconductor field effect transistor with high dielectric constant Appl. Phys. Lett. 96, 142110 (2010); 10.1063/1.3384999 Anomalous negative bias temperature instability behavior in p -channel metal-oxide-semiconductor field-effect transistors with Hf Si O N Si O 2 gate stack This letter investigates a hump in gate current after dynamic negative bias stress (NBS) in Hf x Zr 1-x O 2 /metal gate p-channel metal-oxide-semiconductor field-effect transistors. By measuring gate current under initial through body floating and source/drain floating, it shows that hole current flows from source/drain. The fitting of gate current-gate voltage characteristic curve demonstrates that Frenkel-Poole mechanism dominates the conduction. Next, by fitting the gate current after dynamic NBS, in the order of Frenkel-Poole then tunneling, the Frenkel-Poole mechanism can be confirmed. These phenomena can be attributed to hole trapping in high-k bulk and the electric field formula E high-k e high-k ¼ Q þ E sio2 e sio2 . V C 2012 American Institute of Physics. [http://dx.