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The paper is concerned with developing quantitative results on the lifetime of coded random-access semiconductor memory systems. Although individual RAM chips are highly reliable, when large numbers of chips are combined to form a large memory system, the reliability may not be sufficiently high for the given application. In this case, error-correction coding is used to improve the reliability and hence the lifetime of the system. Formulas are developed which will enable the system designer todoi:10.1049/ip-e.1982.0017 fatcat:hmk4dxlidrbztnygpqv2rx4zna