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A technology similar to silicon-on-insulator is highly desirable for III-V electronics to support scaling for future generations. This letter reports the first realization of strained GaN quantum-well transistors embedded in unstrained AlN as the insulator. The molecular beam epitaxy (MBE)-grown heterostructure consisting of an ultrathin GaN channel buried in strain-free AlN barriers is favorable for scaling by the suppression of shortchannel effects. Ohmic contacts are realized withdoi:10.1109/led.2012.2186628 fatcat:mh3t45phxjekjlmkauljbmixia