Silicon technology tradeoffs for radio-frequency/mixed-signal "systems-on-a-chip"

L.E. Larson
2003 IEEE Transactions on Electron Devices  
Silicon technology has progressed over the last several years from a digitally oriented technology to one well suited for microwave and RF applications at a high level of integration. Technology scaling, both at the transistor and back-end metallization level, has driven this progress. CMOS technology is ideally suited for low-noise amplification and receiver applications, but the fundamental breakdown voltage is lower than that of equivalent Si/SiGe HBTs. High-quality passive devices are
more » ... y important, and improvements in metallization technology are resulting in higher quality inductors. This paper summarizes the silicon technology issues associated with RF "system-on-a-chip" applications. Index Terms-Capacitor, HBT, inductor, linearity, low-noise amplifier (LNA), mixer, MOSFET, noise figure, power amplifier, RF CMOS, SiGe, third-order input-referred intercept point (IIP3), transceiver, voltage-controlled oscillator (VCO).
doi:10.1109/ted.2003.810482 fatcat:yi5sw74d3ngc7nz35pv3376vuy