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Silicon technology has progressed over the last several years from a digitally oriented technology to one well suited for microwave and RF applications at a high level of integration. Technology scaling, both at the transistor and back-end metallization level, has driven this progress. CMOS technology is ideally suited for low-noise amplification and receiver applications, but the fundamental breakdown voltage is lower than that of equivalent Si/SiGe HBTs. High-quality passive devices aredoi:10.1109/ted.2003.810482 fatcat:yi5sw74d3ngc7nz35pv3376vuy