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A comparative study of two types of metamorphic double heterojunction long-wavelength photodiodes on GaAs substrates is performed in terms of their bandwidths and responsivities. A P-i-I-N heterostructure with a large bandgap drift layer (I-InAlAs) at the cathode end of the photoabsorption region (i-InGaAs) is compared experimentally and theoretically to a P-i-N structure without a drift layer. Both types of photodiodes were fabricated using an InGaAs-InGaAlAs-InAlAs double heterostructuredoi:10.1109/68.950747 fatcat:bcjehwrmajay7jilgzfz4g4p2a