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Emerging Lithographic Technologies XII
Step and Flash Imprint Lithography (S-FIL ® ) in conjunction with Sacrificial Imprint Materials (SIM) shows promise as a cost effective solution to patterning sub 45 nm features and is capable of simultaneously patterning two levels of interconnect structures, which provides a high throughput and low cost BEOL process. This paper describes the integration of S-FIL into an industry standard Cu/low-k dual damascene process that is being practiced in the ATDF at Sematech in Austin. The patterndoi:10.1117/12.772908 fatcat:su2nufstizfopnrgrr42hrctwi