Dual damascene BEOL processing using multilevel step and flash imprint lithography

Brook H. Chao, Frank Palmieri, Wei-Lun Jen, D. Hale McMichael, C. Grant Willson, Jordan Owens, Rich Berger, Ken Sotoodeh, Bruce Wilks, Joseph Pham, Ronald Carpio, Ed LaBelle (+2 others)
2008 Emerging Lithographic Technologies XII  
Step and Flash Imprint Lithography (S-FIL ® ) in conjunction with Sacrificial Imprint Materials (SIM) shows promise as a cost effective solution to patterning sub 45 nm features and is capable of simultaneously patterning two levels of interconnect structures, which provides a high throughput and low cost BEOL process. This paper describes the integration of S-FIL into an industry standard Cu/low-k dual damascene process that is being practiced in the ATDF at Sematech in Austin. The pattern
more » ... in. The pattern transferring reactive ion etching (RIE) process is the most critical step and was extensively explored in this study. In addition to successful process development, the results provide useful insight into the optimal design of multilevel templates which must take into account the characteristics of both the imaging material and the dielectric layer. Downloaded From: http://proceedings.spiedigitallibrary.org/ on 04/21/2014 Terms of Use: http://spiedl.org/terms Proc. of SPIE Vol. 6921 69210C-2 Downloaded From: http://proceedings.spiedigitallibrary.org/ on 04/21/2014 Terms of Use: http://spiedl.org/terms Proc. of SPIE Vol. 6921 69210C-3 Downloaded From: http://proceedings.spiedigitallibrary.org/ on 04/21/2014 Terms of Use: http://spiedl.org/terms Proc. of SPIE Vol. 6921 69210C-13 Downloaded From: http://proceedings.spiedigitallibrary.org/ on 04/21/2014 Terms of Use: http://spiedl.org/terms
doi:10.1117/12.772908 fatcat:su2nufstizfopnrgrr42hrctwi