Optimum Performance for Microanalysis with Silicon Drift Detectors with Integrated FET

A Niculae, H Soltau, P Lechner, A Liebl, G Lutz, L Strüder, R Eckhard, G Schaller, F Schopper
2007 Microscopy and Microanalysis  
Silicon Drift Detectors (SDDs) with integrated JFET transistor are fabricated at Max-Plank-Institute in Munich in cooperation with PNSensor and are widely used as high-resolution X-ray sensors in micro-beam and XRF analysis.
doi:10.1017/s1431927607078117 fatcat:64tr4aia5zcgxbcs6vr3wrv5o4