Monolithic Integration of a Folded Dipole Antenna With a 24-GHz Receiver in SiGe HBT Technology
IEEE transactions on microwave theory and techniques
The integration of an on-chip folded dipole antenna with a monolithic 24-GHz receiver manufactured in a 0.8-m SiGe HBT process is presented. A high-resistivity silicon substrate (1000 cm) is used for the implemented circuit to improve the efficiency of the integrated antenna. Crosstalk between the antenna and spiral inductors is analyzed and isolation techniques are described. The receiver, including the receive and an optional transmit antenna, requires a chip area of 4.5 mm 2 and provides
... B conversion gain at 24 GHz with a power consumption of 960 mW. Index Terms-Dipole antennas, heterojunction bipolar transistors (HBTs), monolithic microwave integrated circuit (MMIC) receivers. , where he is involved with gallium-nitrade-based electronics, sensors, and actuators. He has authored or coauthored over 40 publications and conference contributions. His main activities are ultra-wideband MMIC design. Sébastien Chartier (S'05) was born in Auchel, France, in 1979. He received the Master's degree in microelectronic from the University of Lille, Lille, France, in 2003, and is currently working toward the Ph.D. degree at where he is currently an RF IC Design Engineer. His main fields of research are analog and mixed-signal silicon bipolar MMICs for fiber-optical communication systems. , where he focuses on heterostructure transistors and their circuit applications. In 2001, he founded the Competence Center for Integrated Circuits in Communications, University of Ulm, a public-private partnership dedicated to research and development in RF and wideband opto-electronic ICs. He has authored or coauthored over 150 publications and conference contributions.