A copy of this work was available on the public web and has been preserved in the Wayback Machine. The capture dates from 2017; you can also visit the original URL.
The file type is
A top-gate self-aligned n-channel polycrystalline silicon (poly-Si) thin-film transistor (TFT) has been fabricated with low temperature (5550 C) and low thermal budget process. The ultrahigh vacuum chemical vapor deposition (UHVICVD) grown poly-Si was served as the channel film, the chemical mechanical polishing (CMP) technique was used to polish the channel surface, plasma-enhanced chemical vapor deposited (PECVD) tetraethylorthosilicate (TEOS) oxide was used as the gate dielectric, and NH3doi:10.1109/55.541762 fatcat:hsrbuhykj5awno2ojlubvhrpgi