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The GaAs͑113͒B surfaces were prepared by molecular-beam epitaxy and were in situ studied by low-energy electron diffraction and scanning tunnelling microscopy. We present results for two different surface structures, the recently observed ͑8ϫ1͒ reconstruction and an As-rich structure. For the ͑8ϫ1͒ reconstruction we confirm a model that consists of Ga dimer zigzag chains along ͓332͔ in two atomic levels. We report on the reflection high-energy electron diffraction ͑RHEED͒ during growth. RHEEDdoi:10.1103/physrevb.65.165320 fatcat:e5td6k7njrfijkkie22xysdh4e