648x487画素ショットキ型赤外CCDイメージセンサ
A 648x487 Pixel Schottky-barrier Infrared CCD Image Sensor

KAZUO KONUMA, SHIGERU TOHYAMA, AKIHITO TANABE, NOBUKAZU TERANISHI, KOUICHI MASUBUCHI, TORU SAITO, TOSHIO MURAMATSU
1991 ITE Technical Report  
A648x487 pixol PtSi Schottky − banier infrared CCD image sensor was developed. Due to developing the Modified Inverted − LOCOS Process which can minimize dead region in pixel , and Two Dopant Concentration Structure which achieves both large charge handling capability and high transfer efficiency , a 40% fill factor of 21x21 μ m size pixel and 12MHz CCD driving were obtained . Noise equivalent temperature difference ( N . ETD . ) was O. 1Kelvin.
doi:10.11485/tvtr.15.16_13 fatcat:iqqnbxalzzenvmqr6mmhziwwey