A self-rectifying memristor model for simulation and ReRAM applications

Sinan Sabah, Nasri Bin Sulaiman
2020 Indonesian Journal of Electrical Engineering and Computer Science  
<span lang="EN-US">In this paper, a self-rectifying memristor (SRM) model is proposed for memristive circuit simulations. This model is based on the behavior of voltage controlled, bipolar memristors that exhibit diode-like rectification behavior when reverse biased. Such unique feature can solve the sneak path problem in crossbar memristive memory structures without requiring additional cell selectors. The results show that the proposed model satisfies the basic memristor's </span><span
more » ... N-US">i-v</span><span lang="EN-US"> characteristics and fits many different memristor devices adequately. The proposed model is implemented in Verilog-A so that it is conveniently incorporated into various memristor applications with different circuit simulators</span>
doi:10.11591/ijeecs.v19.i3.pp1204-1209 fatcat:napn2xczlbecfdai4zzkmwoxsq