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Charge and spin transport in artificial magnetic structures, like nanopillar spin valves, planar tunnel junctions, and mesoscopic double-barrier junctions (single-electron transistors) are briefly surveyed, with particular emphasis on magnetoresistance effects and current-induced magnetic switching and spin dynamics. The methods of spin current generation are also discussed, particularly the method based on spin Hall effect.doi:10.12693/aphyspola.118.199 fatcat:gintrkh53bc2tdbctpqmzzp24i