Design of charge pump circuit in low-voltage CMOS process with suppressed return-back leakage current

Yi-Hsin Weng, Hui-Wen Tsai, Ming-Dou Ker
2010 2010 IEEE International Conference on Integrated Circuit Design and Technology  
A new charge pump circuit has been proposed to suppress the return-back leakage current without suffering the gate-oxide overstress problem in low-voltage CMOS process. A test chip has been implemented in a 65-nm CMOS process to verify the proposed charge pump circuit with four pumping stages. The measured output voltage is around 8.8 V with 1.8-V supply voltage, which is better than the conventional charge pump circuit with the same pumping stages. By reducing the return-back leakage current
more » ... d without suffering gate-oxide reliability problem, the new proposed charge pump circuit is suitable for the applications in low-voltage CMOS IC products. Cout=20 pF Cout=20 pF 978-1-4244-5775-5/10/$26.00®2010IEEE 158 ICICDT-10
doi:10.1109/icicdt.2010.5510271 fatcat:tnqy56aeyrdrfoib4uturluz7e