Temperature dependence of contact resistance of Au−Ti−Pd2Si−n+-Si ohmic contacts

A. Ye. Belyaev, V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine 41, prospect Nauky, 03028 Kyiv, Ukraine Phone: (380-44) 525-61-82, fax: (380-44) 525-83-42, e-mail: konakova@isp.kiev.ua
2010 Semiconductor Physics, Quantum Electronics & Optoelectronics  
We investigated temperature dependence of contact resistance of an Au−Ti−Pd 2 Si ohmic contact to heavily doped n + -Si. The contact resistance increases with temperature owing to conduction through the metal shunts. In this case, the limiting process is diffusion input of electrons to the metal shunts. The proposed mechanism of contact resistance formation seems to realize also in the case of wide-gap semiconductors with high concentration of surface states and dislocation density in the contact.
more » ... ensity in the contact.
doi:10.15407/spqeo13.04.436 fatcat:i24wpxsvsbgufa37hsfjbsnn4y