A copy of this work was available on the public web and has been preserved in the Wayback Machine. The capture dates from 2020; you can also visit the original URL.
The file type is
We investigated temperature dependence of contact resistance of an Au−Ti−Pd 2 Si ohmic contact to heavily doped n + -Si. The contact resistance increases with temperature owing to conduction through the metal shunts. In this case, the limiting process is diffusion input of electrons to the metal shunts. The proposed mechanism of contact resistance formation seems to realize also in the case of wide-gap semiconductors with high concentration of surface states and dislocation density in the contact.doi:10.15407/spqeo13.04.436 fatcat:i24wpxsvsbgufa37hsfjbsnn4y