Formation of silicon nanoclusters in buried ultra-thin oxide layers

O. S. Oberemok
2011 Semiconductor Physics, Quantum Electronics & Optoelectronics  
The peculiarities of buried layer formation obtained by co-implantation of O 2 ions with the energy of 130 keV and carbon ions within the energy range of 30-50 keV have been investigated. The corresponding ion doses for carbon and oxygen ions were equal to and , respectively. It has been observed that annealing at 1150 °C results in enhanced oxygen diffusion towards the region with a maximum carbon concentration. Analysis of X-ray diffraction patterns with a SIMS depth profiles inherent to
more » ... led samples suggests formation of Si nanoclusters in the region with maximum concentrations of carbon and oxygen vacancies. The intensive luminescence has been observed with the maximum at 600 nm, which could be associated with silicon nano-inclusions in thin stoichiometric SiO 2 16 cm 10 2 − × 2 17 cm 10 8 . 1 − × 2 layer.
doi:10.15407/spqeo14.03.269 fatcat:agp6rypx2bddpnifexfus44bty