Er3+ - doped (0.5-2%wt) Ga1As39S60 glasses were synthesized by melting appropriate amounts of Ga, As, S as starting materials in rotating furnace and consequently quenching in salt batch media (NaNO3 + KNO3) with the temperature of 130\(℃\). X-ray diffraction spectra and FESEM micrograph showed the amorphous nature and homogeneous structure of the prepared samples with no clusters. The glass transition temperature of samples was increased from 183\(℃\) to 206\(℃\) by increasing Er3+ amount from

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... 0.5 to 2%wt. The effects of Er3+ on absorption coefficient\(\left(\alpha \right)\), Fermi energy level(EF), direct and indirect forbidden bands, and Urbach energy were investigated and later ones were increased from 1.75 to 1.77ev, from 1.80 to 1.84 ev, from 2.05 to 2.08 ev and from 0.10 to 0.11 ev, respectively with increasing Er3+ ions (0.5-2%wt) which confirmed the modifying role of Er3+ ions in Ga-As-S system.