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Two series of silicon films on c-Si substrates with different thicknesses are deposited by radio frequency plasma enhanced chemical vapor deposition (rf-PECVD). The structures of samples are investigated by spectroscopic ellipsometry (SE) with fixed angle. The results show that the films are all amorphous for the first series of samples. In such a case an abrupt a-Si:H/c-Si heterojunction is formed which is beneficial for the passivation of the interface of HIT solar cell. For amorphous silicondoi:10.7498/aps.61.157803 fatcat:cunkdosudngifhg6mhrqgiq6ne