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We report on a memory device concept based on the recently discovered unidirectional spin Hall magnetoresistance (USMR), which can store multiple bits of information in a single ferromagnetic heterostructure. We show that the USMR with possible contribution of Joule heating-driven magnetothermal effects in ferromagnet/normal metal/ferromagnet (FM/NM/FM) trilayers gives rise to four different 2nd harmonic resistance levels corresponding to four magnetization states ( ¶, ! , ! , µ) in which thedoi:10.1063/1.4983784 fatcat:uqlio5wwq5bv3k5av5v2fh3lb4