A Millimeter-Wave (23–32 GHz) Wideband BiCMOS Low-Noise Amplifier

Mohamed El-Noza, Edgar Sanchez-Sinencio, Kamran Entesari
2010 IEEE Journal of Solid-State Circuits  
This paper presents a 23-32 GHz wideband BiCMOS low-noise amplifier (LNA). The LNA utilizes coupled-resonators to provide a wideband load. To our knowledge, the proposed LNA achieves the widest bandwidth with minimum power consumption using 0.18 m BiCMOS technology in K-band. Analytical expressions for the wideband input matching, gain, noise figure and linearity are presented. The LNA is implemented using 0.18 m BiCMOS technology and occupies an area of 0.25 mm 2 . It achieves a voltage gain
more » ... es a voltage gain of 12 dB, 3-dB bandwidth of 9 GHz, noise figure between 4.5-6.3 dB, linearity higher than 6.4 dBm with a power consumption of 13 mW from a 1.5 V supply.
doi:10.1109/jssc.2009.2038126 fatcat:kjjjf77upnhtffyvhby6r7pagi