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A Millimeter-Wave (23–32 GHz) Wideband BiCMOS Low-Noise Amplifier
2010
IEEE Journal of Solid-State Circuits
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This paper presents a 23-32 GHz wideband BiCMOS low-noise amplifier (LNA). The LNA utilizes coupled-resonators to provide a wideband load. To our knowledge, the proposed LNA achieves the widest bandwidth with minimum power consumption using 0.18 m BiCMOS technology in K-band. Analytical expressions for the wideband input matching, gain, noise figure and linearity are presented. The LNA is implemented using 0.18 m BiCMOS technology and occupies an area of 0.25 mm 2 . It achieves a voltage gain
doi:10.1109/jssc.2009.2038126
fatcat:kjjjf77upnhtffyvhby6r7pagi