Improved Lower Electrode Oxidation of High-k TiCeO Metal-Insulator-Metal Capacitors by Using Dual Plasma Treatment

Chun-Hu Cheng, H. H. Hsu, C. K. Deng, Albert Chin, C. P. Chou
2008 ECS Transactions   unpublished
We have fabricated high-Ir/TiCeO/TaN metal-insulator-metal (MIM) capacitors using a dual plasma treatment on bottom electrode. The novel plasma treatment suppresses the growth of bottom interfacial layer to reduce the degradation of capacitor performance under 400 o C PDA. A low leakage current of 1.7 10 -7 A/cm 2 at -1 V and capacitance density of ~18 fF/ m 2 at 1 MHz were obtained for 21 nm thick TiCeO MIM devices; moreover, a 37 nm thick TiCeO film has a capacitance density of 11 fF/ m 2 ,
more » ... y of 11 fF/ m 2 , which gives a value of 45. Consequently, the excellent device performance is due to the combined effects of the dual plasma treatment, high-TiCeO dielectric and a high work-function Ir metal. CeO 2 is one of attractive rare earth metal oxides that has many merits such as a high
doi:10.1149/1.2981614 fatcat:3ugaf6e5qzcptfkih4z6bqnffe