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We have fabricated high-Ir/TiCeO/TaN metal-insulator-metal (MIM) capacitors using a dual plasma treatment on bottom electrode. The novel plasma treatment suppresses the growth of bottom interfacial layer to reduce the degradation of capacitor performance under 400 o C PDA. A low leakage current of 1.7 10 -7 A/cm 2 at -1 V and capacitance density of ~18 fF/ m 2 at 1 MHz were obtained for 21 nm thick TiCeO MIM devices; moreover, a 37 nm thick TiCeO film has a capacitance density of 11 fF/ m 2 ,doi:10.1149/1.2981614 fatcat:3ugaf6e5qzcptfkih4z6bqnffe