A new cryogenic CMOS readout structure for infrared focal plane array

Chih-Cheng Hsieh, Chung-Yu Wu, Tai-Ping Sun
1997 IEEE Journal of Solid-State Circuits  
A new current readout structure for the infrared (IR) focal-plane-array (FPA), called the switch-current integration (SCI) structure, is presented in this paper. By applying the share-buffered direct-injection (SBDI) biasing technique and off focal-plane-array (off-FPA) integration capacitor structure, a high-performance readout interface circuit for the IR FPA is realized with a pixel size of 50 2 50 m 2 . Moreover, the correlated double sampling (CDS) stage and dynamic discharging output
more » ... are utilized to improve noise and speed performance of the readout structure under low power dissipation. An experimental SCI readout chip has been designed and fabricated in 0.8-m double-poly-double-metal (DPDM) n-well CMOS technology. The measurement results of the fabricated readout chip at 77 K with 4 and 8 V supply voltages have successfully verified both the readout function and the performance improvement. The fabricated chip has a maximum charge capacity of 1.12 2 10 8 electrons, a maximum transimpedance of 1 2 10 9 , and ae active power dissipation of 30 mW. The proposed CMOS SCI structure can be applied to various cryogenic IR FPA's. Index Terms-CMOS integrated circuit, cryogenic electronics, focal plane array, readout circuit.
doi:10.1109/4.604075 fatcat:i5xsewb2rrg5jflbynjr4ujule