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ZnO is a promising semiconductor for short wavelength light emitters and sensors. We present the growth of ZnO by metalorganic chemical vapor phase epitaxy using a two step growth process on GaN on Si or GaN on sapphire templates. For the growth of ZnO we grow a low−temperature buffer layer using tert−butanol at 450°C and a second high−temperature ZnO layer is grown at 850−950°C using N 2 O. In cathodoluminescence measurements at 5 K dominant emission from the (A0,X) exciton with a FWHM of 1.4fatcat:hjb67idl3jgyllbkmupvmu653m