A copy of this work was available on the public web and has been preserved in the Wayback Machine. The capture dates from 2019; you can also visit the original URL.
The file type is
The aim of this study is to investigate annealing effects on the electrical characteristics of aluminum oxide (Al 2 O 3) MOS capacitors. Chemical changes after annealing have been characterized using the Fourier transform infrared spectroscopy prior to detailed electrical investigation. The influence of annealing temperature on electrical characteristics has been investigated by capacitance-voltage (C-V) and conductance-voltage (G/ ω -V) curves. Effective oxide trap density (N ox) , border trapdoi:10.3906/fiz-1805-1 fatcat:axj4n77g65fhldijadtyzlii74