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One of the primary challenges facing quantum dot (QD)-based intermediate band solar cells is the short lifetime of charge carriers (∼1 ns). To investigate this, InAs QD/GaAs 1-x Sb x quantum well (QW) solar cells (SCs) with a 2-nm GaAs interlayer between the QDs and QW were fabricated for x = 0, 0.08, 0.14, and 0.17, respectively. Time-resolved photoluminescence measurements demonstrated prolonged carrier lifetimes up to 480 ns for the type-II SCs with x ࣙ 14%. This improvement in carrierdoi:10.1109/jphotov.2018.2815152 fatcat:mxqh4jq2pva2loukp7nnuuyt2y