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Multi-junction solar cells achieve high efficiency by stacking sub-cells of different bandgaps (typically GaInP/GaAs/Ge) resulting in efficiencies in excess of 40%. The efficiency can be improved by introducing a 1 eV absorber into the stack, either replacing Ge in a triplejunction configuration or on top of Ge in a quad-junction configuration. GaAs 0.94 Bi 0.06 yields a direct-gap at 1 eV with only 0.7% strain on GaAs and the feasibility of the material has been demonstrated from GaAsBidoi:10.1088/0268-1242/30/9/094010 fatcat:bh7e4exvnzbabf5txroahhgcs4