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Peak current densities of InAs/AlSb/GaSb/AlSb/InAs resonant interband tunneling diodes ͑RITD͒ grown by molecular beam epitaxy have been measured as a function of the growth temperature. The growth procedures were designed to produce nominally identical AlSb tunneling barriers. The variations observed in the peak current for positive bias are consistent with the barrier on the substrate side of the RITD becoming effectively thicker for diodes grown at high temperatures. Plan-view in situdoi:10.1063/1.1415539 fatcat:35jhjv34jzgrlczy7fn4dwqo2e