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Analysis of Degradation Mechanism in SONOS-TFT Under Hot-Carrier Operation

Te-Chih Chen, Ting-Chang Chang, Shih-Ching Chen, Tien-Yu Hsieh, Fu-Yen Jian, Chia-Sheng Lin, Hung-Wei Li, Ming-Hsien Lee, Jim-Shone Chen, Ching-Chieh Shih
2010 IEEE Electron Device Letters  
This letter investigates the degradation mechanism of polycrystalline silicon thin-film transistors with a silicon-oxidenitride-oxide-silicon structure under OFF-state stress. During the electrical stress, the hot hole generated from band-to-band tunneling process will inject into gate dielectric, and the significant ON-state degradation (more than 1 order) indicates that the interface states are accompanied with hot-hole injection. In addition, the asymmetric I-V characteristics indicate that
more » ... tics indicate that the interface states are located near the drain side. Moreover, the ISE-TCAD simulation tool was utilized to model the degradation mechanism and analyze trap states distribution. Although both the vertical and lateral electrical fields are factors for degradation and hothole injection, the degradation is mainly affected by the lateral electrical field over a critical point. Index Terms-Hot carriers, nonvolatile memory, thin-film transistors (TFTs).
doi:10.1109/led.2010.2079912 fatcat:pyu2q3t33bdupmkj74zbmiwwtu