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Photoluminescence from Pressure — Annealed Nanostructured Silicon Dioxide and Nitride Films [chapter]

A. Misiuk, L. Rebohle, A. Iller, I. E. Tyschenko, J. Jun, A. Panas
2000 Nanostructured Films and Coatings  
Light emission in thin films (SiO 2 , Si0 2 :Si and Si 3 N 4 ) on a single crystalline silicon surface has been investigated after treatment at enhanced argon pressure, HP. Pronounced effect of HP up to 1.5 GPa during annealing up to 1550 K on photoluminescence, PL, of the SiO 2 , SiO2:Si and Si 3 N 4 films of 0.1 -1.2 jim thickness has been stated. The pressure -temperature treatment results in development and enhancement of ultraviolet and visible PL at about 290 -320, 360, 460, 600 and 680
more » ... 460, 600 and 680 nm, related to stress induced creation of PL active silicon nanoclusters and other oxygen deficient defects. 157 G.M. Chow et al. (eds.), Nanostructured Films and Coatings, 157-170.
doi:10.1007/978-94-011-4052-2_13 fatcat:kkjmdpo5rrhs3i534f4i2uu7nq