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In this letter, novel heterostructure p-i-n GaN avalanche photodiodes (APDs) with p-type In 0.05 Ga 0.95 N layer are proposed and analyzed through Silvaco Atlas simulations. The introduction of the In 0.05 Ga 0.95 N layer generates a negative polarization charge at the p-In 0.05 Ga 0.95 N/i-GaN heterojunction interface via the piezoelectric polarization effect. Three times higher hole concentration in the p-In 0.05 Ga 0.95 N layer is obtained due to the smaller activation energy of the Mgdoi:10.1109/jphot.2020.2969991 fatcat:nn3s3lrz75awfblpzfidh6y7pu