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28-nm UTBB FD-SOI vs. 22-nm Tri-Gate FinFET Review: A Designer Guide—Part II

Ali Mohsen, Adnan Harb, Nathalie Deltimple, Abraham Serhane
2017 Circuits and Systems  
This is Part II of a two-part paper that explores the 28-nm UTBB FD-SOI CMOS and the 22-nm Tri-Gate FinFET technology as the better alternatives to bulk transistors especially when the transistor's architecture is going fully depleted and its size is becoming much smaller, 28-nm and above. Reliability tests of those alternatives are first discussed. Then, a comparison is made between the two alternative transistors comparing their physical properties, electrical properties, and their
more » ... nd their preferences in different applications.
doi:10.4236/cs.2017.85007 fatcat:uttzc7vj7rfjhdqe5qt33yknkq