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Conversion efficiency of polycrystalline silicon pn solar cells, which are fabricated using wafers sliced out of B-doped p-type poly-Si ingots, strongly depends on where it is taken from within the ingot. Since the wafers near the bottom or top of the ingot cannot be used for commercial solar cells, the relationship between the conversion efficiency and the temperature dependence of the hole concentration in poly-Si wafers is investigated. It is found that the hole concentrations are classifieddoi:10.4028/www.scientific.net/ssp.93.141 fatcat:7sv3ced52jaofkj63gabzdgy6e